GaN HEMT noise modeling based on 50-Ω noise factor

Low flicker-noise DC amplifier for 50 Ω sources

This article analyzes the design of a low-noise amplifier intended as the input front-end for the measurement of the low-frequency components (below 10 Hz) of a 50 Ω source. Low residual flicker is the main desired performance. This feature can only be appreciated if white noise is sufficiently low, and if an appropriate design ensures dc stability. An optimal solution is proposed, in which the...

Low Frequency Noise Of AlGaN/GaN HEMT Grown On Al2O3 , Si And SiC Substrates

The use of wide bandgap materials for broadcast telecommunication and defense systems allow high power, high efficiency and high integration levels of active devices thanks to their microwave electrical performances. GaN based devices have also demonstrated great potential for high frequency linear low noise applications. However, low frequency noise (LFN) performances characteristics are still...

THESIS FOR THE DEGREE OF LICENTIATE OF ENGINEERING GaN HEMT Low Frequency Noise Characterization for Low Phase Noise Oscillator Design

On-Wafer, Cryogenic Characterization of Ultra-Low Noise HEMT Devices

Significant advances in the development of high electron-mobility field-effect transistors (HEMTs) have resulted in cryogenic, low-noise amplifiers (LNAs) whose noise temperatures are within an order of magnitude of the quantum noise limit (hf/k). Further advances in HEMT technology at cryogenic temperatures may eventually lead to the replacement of maser and superconducting–insulator– supercon...

Hydrogen sensors based on AlGaN/AlN/GaN HEMT

Pt/AlGaN/AlN/GaN high electron mobility transistors (HEMT) were fabricated and characterized for hydrogen sensing. Pt and Ti/Al/Ni/Au metals were evaporated to form the Schottky contact and the ohmic contact, respectively. The sensors can be operated in either the field effect transistor (FET) mode or the Schottky diode mode. Current changes and time dependence of the sensors under the FET and ...